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Si4312
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Parameter
Supply Voltage
Supply Voltage Powerup Rise Time
Ambient Temperature
Symbol
V DD
V DD-RISE
T A
Test Condition
Min
2.7
10
–40
Typ
3.3
—
25
Max
3.6
—
85
Unit
V
μ s
°C
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V DD = 3.3 V and 25 ? C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings 1,2
Input Current
RF Input Level
Parameter
Supply Voltage
3
Input Voltage 3
Operating Temperature
Storage Temperature
4
Symbol
V DD
I IN
V IN
T OP
T STG
Value
–0.5 to 3.9
10
–0.3 to (V DD + 0.3)
–45 to 95
–55 to 150
0.4
Unit
V
mA
V
? C
? C
V PK
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
2. The Si4312 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
Handling and assembly of this device should only be done at ESD-protected workstations.
3. For input pins 315/434, RATIO, BT[1:0], TH[1:0].
4. At RF input pin RX_IN.
4
Rev. 0.5
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